PART |
Description |
Maker |
HYS64D16020GD HYS64D16020GDL-7-A HYS64D16020GDL-8- |
DDR SDRAM Modules - 128MB (16Mx64) PC2100 2-bank Unbuffered DDR SDRAM SO Modules
|
Infineon Technologies AG
|
HYS64V16302GU-8-C2 HYS64V16302GU HYS64V16302GU-75- |
3.3 V 16M × 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules 3.3 V 16M 】 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules SDRAM Modules - 128MB PC133 (3-3-3) 1-bank; End-of-Life SDRAM Modules - 128MB PC133 (2-2-2) 1-bank; End-of-Life 3.3 V 16M 64-Bit/ 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules SDRAM|16MX64|CMOS|DIMM|168PIN|PLASTIC 3.3 V 16M 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
HYS72D64020GR HYS72D128020GR HYS72D64000GR |
2.5 V 184-pin Registered DDR-I SDRAM Modules(2.5 V 184脚G位寄存型 DDR-I SDRAM 模块) 2.5 V 184-pin Registered DDR-I SDRAM Modules(2.5 V 184脚12M位寄存型 DDR-I SDRAM 模块) 2.584针注册的DDR - 1 SDRAM的模块(2.584脚,512M的位寄存型的DDR - SDRAM内存模块余)
|
SIEMENS AG
|
M470L1714BT0-CLB0 M470L1714BT0-CLA0 M470L1714BT0-C |
16Mx64 200pin DDR SDRAM SODIMM based on 8Mx16 Data Sheet 128MB DDR SDRAM MODULE(16Mx64 based on 8Mx16 DDR SDRAM)
|
Samsung Electronic SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM48L16031BT-GF0 KM48L16031BT-GFY KM48L16031BT-GFZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns. DDR SDRAM Specification Version 0.61 128Mb DDR SDRAM 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns.
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HY5DU28822BT-X HY5DU28822BT HY5DU28822BLT-X HY5DU2 |
DDR SDRAM - 128Mb 128M-S DDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187 ; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No 128Mb SDRAM, 3.3V, LVTTL, 166MHz 128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HYMD116725BL8-H HYMD116725BL8-K HYMD116725BL8-L HY |
Unbuffered DDR SDRAM DIMM SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC 16Mx72|2.5V|M/K/H/L|x9|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor http://
|
HY5DU281622DT-J HY5DU2842DT-J HY5DU2842DT-L HY5DU2 |
DDR SDRAM - 128Mb
|
Hynix Semiconductor
|
H5DU1262GTR-FB H5DU1262GTR-E3 H5DU1262GTR-E4 H5DU1 |
128Mb DDR SDRAM
|
Hynix Semiconductor
|
V58C2128164S V58C2128804SXT8 V58C2128404SXT8 V58C2 |
HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM High performance 2.5V 128MB DDR SDRAM
|
Mosel Vitelic Corp
|